Hydrothermal Processing of Carbon Nanotubes from Dense Fluids: Growth Mechanism
نویسندگان
چکیده
منابع مشابه
Growth of horizontally aligned dense carbon nanotubes from trench sidewalls.
Horizontally aligned, dense carbon nanotubes (HADCNTs) in the form of CNT cantilevers/bridges were grown from selected trench sidewalls in silicon substrate by chemical vapor deposition (CVD). The as-grown CNT cantilevers/bridges are packed with multiwalled carbon nanotubes (MWCNTs) with a linear density of about 10 CNTs µm(-1). The excellent horizontal alignment of these CNTs is mainly ascribe...
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Carbon nanotubes (CNTs) have been under intense investigations during the past two decades due to their unique physical and chemical properties; however, there is still no commonly accepted growth mechanism to describe the growth behavior of CNTs. Here, we propose a nano Czochralski (CZ) model which regards the catalytic growth of a CNT as a CZ process taking place on the nano scale. The main i...
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One of the difficulties in developing practical nanotube-based devices is the large-scale production of aligned carbon nanotubes (CNTs). Due to their novel electronic and thermal properties, single-walled nanotubes (SWNTs) show great potential for use a variety of applications . The alignment of SWNTs has been reported, but only parallel to the substrate in the presence of strong electric or ma...
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The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts and CNTs characterization was carried out ...
متن کاملRole of growth temperature in CVD synthesis of Carbon nanotubes from Ni-Co bimetallic catalysts
The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts and CNTs characterization was carried out ...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2001
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.42.1681